BF245C Todos los transistores

 

BF245C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF245C

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente |Vds|: 30 V

Corriente continua de drenaje |Id|: 0.025 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1.1 pF

Resistencia drenaje-fuente RDS(on): 100 Ohm

Empaquetado / Estuche: TO92

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BF245C Datasheet (PDF)

..1. bf245a bf245b bf245c 1.pdf Size:97K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

..2. bf245a bf245b bf245c.pdf Size:24K _fairchild_semi

BF245C
BF245C

BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate

0.1. bf245a-bf245b-bf245c 2.pdf Size:67K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

9.1. bf245a-b-c.pdf Size:286K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORS DATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effect transistorsProduct specification 1996 Jul 30Supersedes data of April 1995NXP Semiconductors Product specificationBF245A; BF245B;N-channel silicon field-effect transistorsBF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequenc

9.2. bf245.pdf Size:67K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

 9.3. bf245a-b.pdf Size:169K _onsemi

BF245C
BF245C

ON SemiconductortBF245AJFET VHF/UHF AmplifiersBF245BNChannel DepletionMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 30 VdcDrainGate Voltage VDG 30 Vdc12GateSource Voltage VGS 30 Vdc3BF244A, BF244BDrain Current ID 100 mAdcCASE 2911, STYLE 22Forward Gate Current IG(f) 10 mAdcTO92 (TO226AA)Total Device Dissipation @ TA

Otros transistores... BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , BF245B , STP75NF75 , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C .

 

 
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