All MOSFET. BF245C Datasheet

 

BF245C MOSFET. Datasheet pdf. Equivalent

Type Designator: BF245C

Type of Transistor: FET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Drain Current |Id|: 0.025 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1.1 pF

Maximum Drain-Source On-State Resistance (Rds): 100 Ohm

Package: TO92

BF245C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF245C Datasheet (PDF)

0.1. bf245a bf245b bf245c 1.pdf Size:97K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

0.2. bf245a-bf245b-bf245c 2.pdf Size:67K _philips

BF245C
BF245C

DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti

 0.3. bf245a bf245b bf245c.pdf Size:24K _fairchild_semi

BF245C
BF245C

BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate

Datasheet: BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , BF245B , 75339P , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C .

 

 
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