BF245C MOSFET. Datasheet pdf. Equivalent
Type Designator: BF245C
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.025 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1.1 pF
Maximum Drain-Source On-State Resistance (Rds): 100 Ohm
Package: TO92
BF245C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF245C Datasheet (PDF)
0.1. bf245a bf245b bf245c 1.pdf 
Size:97K _philips
DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti
0.2. bf245a-bf245b-bf245c 2.pdf Size:67K _philips
DISCRETE SEMICONDUCTORSDATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effecttransistorsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF245A; BF245B; BF245CFEATURES PINNING Interchangeability of drain and source connecti
0.3. bf245a bf245b bf245c.pdf Size:24K _fairchild_semi
BF245A/BF245B/BF245CN-Channel Amplifiers This device is designed for VHF/UHF amplifiers. Sourced from process 50.TO-9211. Gate 2. Source 3. DrainAbsolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mAPD Total Device Dissipation @TA=25C 350 mWDerate
Datasheet: BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , BF245B , 75339P , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C .
