BF245C MOSFET. Datasheet pdf. Equivalent
Type Designator: BF245C
Type of Transistor: FET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.35 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 0.025 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 1.1 pF
Maximum Drain-Source On-State Resistance (Rds): 100 Ohm
Package: TO92
BF245C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF245C Datasheet (PDF)
1.1. bf245a-bf245b-bf245c 2.pdf 
Size:67K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections
1.2. bf245a bf245b bf245c 1.pdf Size:97K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C FEATURES PINNING • Interchangeability of drain and source connections
1.3. bf245a bf245b bf245c.pdf Size:24K _fairchild_semi
BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C 350 mW Derate above 25
Datasheet: BF1105 , BF1105R , BF1105WR , BF1109 , BF1109R , BF1109WR , BF245A , BF245B , 75339P , BF327 , BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C .
