SPA04N80C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPA04N80C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO220FP

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SPA04N80C3 datasheet

 ..1. Size:426K  infineon
 spa04n80c3.pdf pdf_icon

SPA04N80C3

SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

 ..2. Size:255K  inchange semiconductor
 spa04n80c3.pdf pdf_icon

SPA04N80C3

isc N-Channel MOSFET Transistor SPA04N80C3 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 8.1. Size:289K  1
 spa04n50c3 spb04n50c3 spp04n50c3.pdf pdf_icon

SPA04N80C3

SPP04N50C3, SPB04N50C3 Final data SPA04N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance

 8.2. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf pdf_icon

SPA04N80C3

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO

MOSTRAR MÁS

Otros transistores... IPW90R1K2C3, IPW90R340C3, IPW90R500C3, IPW90R800C3, SPA02N80C3, SPA03N60C3, SPA04N50C3, SPA04N60C3, 2SK3878, SPA06N60C3, SPA06N80C3, SPA07N60C3, SPA07N60CFD, SPA07N65C3, SPA08N50C3, SPA08N80C3, SPA11N60C3