SPA04N80C3 Spec and Replacement
Type Designator: SPA04N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220FP
SPA04N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA04N80C3 Specs
spa04n80c3.pdf
SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 1.3 DS(on)max Extreme dv/dt rated Q 23 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci... See More ⇒
spa04n80c3.pdf
isc N-Channel MOSFET Transistor SPA04N80C3 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
spa04n50c3 spb04n50c3 spp04n50c3.pdf
SPP04N50C3, SPB04N50C3 Final data SPA04N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance ... See More ⇒
spp04n60c3 spb04n60c3 spa04n60c3.pdf
SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO... See More ⇒
Detailed specifications: IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , SPA04N50C3 , SPA04N60C3 , 2SK3878 , SPA06N60C3 , SPA06N80C3 , SPA07N60C3 , SPA07N60CFD , SPA07N65C3 , SPA08N50C3 , SPA08N80C3 , SPA11N60C3 .
History: HM80N15 | H5N2503P | F20N50 | IXFX66N50Q2 | TMD830AZ | TMD8N50Z | IRF640P
Keywords - SPA04N80C3 MOSFET specs
SPA04N80C3 cross reference
SPA04N80C3 equivalent finder
SPA04N80C3 lookup
SPA04N80C3 substitution
SPA04N80C3 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
