SPA04N80C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPA04N80C3
Marking Code: 04N80C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO220FP
SPA04N80C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA04N80C3
Datasheet (PDF)
..1. Size:426K infineon
spa04n80c3.pdf
SPA04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3DS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci
..2. Size:255K inchange semiconductor
spa04n80c3.pdf
isc N-Channel MOSFET Transistor SPA04N80C3FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
8.1. Size:289K 1
spa04n50c3 spb04n50c3 spp04n50c3.pdf
SPP04N50C3, SPB04N50C3Final dataSPA04N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance
8.2. Size:304K infineon
spp04n60c3 spb04n60c3 spa04n60c3.pdf
SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO
Datasheet: IPW90R1K2C3
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