SPD03N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPD03N60S5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SPD03N60S5 MOSFET
SPD03N60S5 Datasheet (PDF)
spd03n60s5 spu03n60s5.pdf

SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-T
spd03n60s5.pdf

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
spd03n60c3 spu03n60c3.pdf

VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum Rat
spd03n60c3.pdf

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Otros transistores... SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 , RU7088R , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 .
History: DH045N06B | VBE2610N | 2SK1324
History: DH045N06B | VBE2610N | 2SK1324



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