SPD03N60S5 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPD03N60S5
Marking Code: 03N60S5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 38 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V
Maximum Drain Current |Id|: 3.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12.4 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO252
SPD03N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPD03N60S5 Datasheet (PDF)
spd03n60s5 spu03n60s5.pdf
SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-T
spd03n60s5.pdf
isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
spd03n60c3 spu03n60c3.pdf
VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum Rat
spd03n60c3.pdf
isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
spd03n50c3.pdf
isc N-Channel MOSFET Transistor SPD03N50C3, ISPD03N50C3FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 560
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
