SPD03N60S5 MOSFET. Datasheet pdf. Equivalent

SPD03N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SPD03N60S5 Datasheet (PDF)

0.1. spd03n60s5 spu03n60s5.pdf Size:892K _infineon

SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 1.4 Ω • New revolutionary high voltage technology ID 3.2 A • Ultra low gate charge PG-TO252 PG-TO251 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 3 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 03N60S5 SPU03N60S5 PG-T

0.2. spd03n60s5.pdf Size:244K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 6.1. spd03n60c3 spu03n60c3.pdf Size:982K _infineon

 VDS Tjmax Ω • • G G • • • • G

6.2. spd03n60c3.pdf Size:243K _inchange_semiconductor

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

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MOSFET: IPF090N03LG | IPF039N03LG | IPU64CN10NG | IPU105N03LG | WFP75N08 | UTC7N65L | SVF4N60CAMJ | SVF4N60CAMN | SVF4N60CAT | SVF4N60CAD | SVF4N60CAK | SVF4N60CAF | SUB85N03-07P | SUP85N03-07P | STP110N7F6 |