SPD03N60S5 - аналоги, даташиты, параметры транзистора

SPD03N60S5 Datasheet (PDF)

..1. Size:892K infineon
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SPU03N60S5SPD03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated2 Ultra low effective capacitances33121 Improved transconductanceType Package Ordering Code Marking03N60S5SPU03N60S5 PG-T

..2. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

6.1. Size:635K infineon
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VDS Tjmax 650 VjmaxFeature 1.4 DS(on) New revolutionary high voltage technology .2 AD Ultra low gate chargePGTO251 PGTO252 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Cde MarkingSPD0 N60C PGTO252 Q67040S4421 0 N60C SPU0 N60C PGTO251 0 N60C Maximum Rat

6.2. Size:243K inchange semiconductor
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isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U