SPD06N60C3 Todos los transistores

 

SPD06N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD06N60C3
   Código: 06N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 74 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
   Carga de la puerta (Qg): 24 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
   Paquete / Cubierta: TO252

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SPD06N60C3 Datasheet (PDF)

 ..1. Size:636K  infineon
spd06n60c3.pdf

SPD06N60C3
SPD06N60C3

SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code

 ..2. Size:245K  inchange semiconductor
spd06n60c3.pdf

SPD06N60C3
SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 8.1. Size:554K  infineon
spd06n80c3.pdf

SPD06N60C3
SPD06N60C3

SPD06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252-3 Ultra low gate charge Ultra low effe

 8.2. Size:245K  inchange semiconductor
spd06n80c3.pdf

SPD06N60C3
SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3FEATURESStatic drain-source on-resistance:RDS(on)0.9Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

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