SPD06N60C3 Todos los transistores

 

SPD06N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD06N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO252
 

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Principales características: SPD06N60C3

 ..1. Size:636K  infineon
 spd06n60c3.pdf pdf_icon

SPD06N60C3

SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code

 ..2. Size:245K  inchange semiconductor
 spd06n60c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 8.1. Size:554K  infineon
 spd06n80c3.pdf pdf_icon

SPD06N60C3

SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effe

 8.2. Size:245K  inchange semiconductor
 spd06n80c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

MOSTRAR MÁS

Otros transistores... SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , K2611 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG .

 

 
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