SPD06N60C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPD06N60C3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO252

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SPD06N60C3 datasheet

 ..1. Size:636K  infineon
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SPD06N60C3

SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO252 Extreme dv /dt rated Improved transconductance Type Package Ordering Code

 ..2. Size:245K  inchange semiconductor
 spd06n60c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 8.1. Size:554K  infineon
 spd06n80c3.pdf pdf_icon

SPD06N60C3

SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effe

 8.2. Size:245K  inchange semiconductor
 spd06n80c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

MOSTRAR MÁS

Otros transistores... SPD03N60C3, SPD03N60S5, SPD04N50C3, SPD04N60C3, SPD04N60S5, SPD04N80C3, SPD04P10PG, SPD04P10PLG, K2611, SPD06N80C3, SPD07N20G, SPD07N60C3, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG