All MOSFET. SPD06N60C3 Datasheet

 

SPD06N60C3 Datasheet and Replacement


   Type Designator: SPD06N60C3
   Marking Code: 06N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 24 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO252
 

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SPD06N60C3 Datasheet (PDF)

 ..1. Size:636K  infineon
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SPD06N60C3

SPD06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO252 Extreme dv /dt rated Improved transconductanceType Package Ordering Code

 ..2. Size:245K  inchange semiconductor
 spd06n60c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.75Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

 8.1. Size:554K  infineon
 spd06n80c3.pdf pdf_icon

SPD06N60C3

SPD06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO252-3 Ultra low gate charge Ultra low effe

 8.2. Size:245K  inchange semiconductor
 spd06n80c3.pdf pdf_icon

SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3FEATURESStatic drain-source on-resistance:RDS(on)0.9Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - SPD06N60C3 MOSFET datasheet

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