All MOSFET. SPD06N60C3 Datasheet

 

SPD06N60C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD06N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Drain Current |Id|: 6.2 A

Total Gate Charge (Qg): 24 nC

Maximum Drain-Source On-State Resistance (Rds): 0.75 Ohm

Package: DPAK, TO252

SPD06N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD06N60C3 Datasheet (PDF)

0.1. spd06n60c3.pdf Size:636K _infineon

SPD06N60C3
SPD06N60C3

SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max • New revolutionary high voltage technology R 0.75 Ω DS(on),max • Ultra low gate charge I 6.2 A D • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances PG-TO252 • Extreme dv /dt rated • Improved transconductance Type Package Ordering Code

0.2. spd06n60c3.pdf Size:245K _inchange_semiconductor

SPD06N60C3
SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N60C3,ISPD06N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.75Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

 8.1. spd06n80c3.pdf Size:554K _infineon

SPD06N60C3
SPD06N60C3

SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 0.9 Ω DS(on)max • Extreme dv/dt rated Q 31 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO252-3 • Ultra low gate charge • Ultra low effe

8.2. spd06n80c3.pdf Size:245K _inchange_semiconductor

SPD06N60C3
SPD06N60C3

isc N-Channel MOSFET Transistor SPD06N80C3,ISPD06N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.9Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

Datasheet: SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , SPD04P10PLG , FDS4435 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG .

 

 
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