SPD08P06PG Todos los transistores

 ..1. Size:599K  infineon
 spd08p06pg.pdf

SPD08P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.3 DS(on),max Enhancement mode I -8.8 A D Avalanche rated dv /dt rated PG-TO252-3 175 C operating temperature Pb-free lead finishing; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free Packing SPD08P06PG

 5.1. Size:592K  infineon
 spd08p06p g.pdf

SPD08P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.3 DS(on),max Enhancement mode I -8.8 A D Avalanche rated dv /dt rated PG-TO252-3 175 C operating temperature Pb-free lead finishing; RoHS compliant Type Package Tape and reel information Marking Lead free Packing SPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Ye

 7.1. Size:219K  siemens
 spd08p05.pdf

SPD08P05 Preliminary data SPU08P05 SIPMOS Power Transistor P channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD08P05 -50 V -8 A 0.3 P-TO252 Q67000-. . . - . . . SPU08P05 -50 V -8 A 0.3 P-TO251 Q67000-. . . - . . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30

 9.1. Size:614K  infineon
 spd08n50c3.pdf

SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Worldwide best RDS(on) in TO-252 PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPD08N50C3 PG-TO25

 9.2. Size:138K  infineon
 spd08n10.pdf

SPD 08N10 Preliminary Data SIPMOS Power Transistor Product Summary Features Drain source voltage 100 V VDS N channel Drain-Source on-state resistance 0.3 RDS(on) Enhancement mode Continuous drain current 8.4 A ID Avalanche rated dv/dt rated Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N10 P-TO252 Q67040-S4126 Tape and Reel SPU08N10

 9.3. Size:134K  infineon
 spd08n05.pdf

SPD 08N05L SIPMOS PowerTransistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.1 RDS(on) Enhancement mode Continuous drain current 8.4 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N05L P-TO252 Q670

 9.4. Size:244K  inchange semiconductor
 spd08n50c3.pdf

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 FEATURES Static drain-source on-resistance RDS(on) 600m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50