SPD08P06PG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPD08P06PG
   Código: 08P06P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.83 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO252

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SPD08P06PG Datasheet (PDF)

..1. Size:599K infineon
spd08p06pg.pdf

SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free PackingSPD08P06PG

5.1. Size:592K infineon
spd08p06p g.pdf

SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliantType Package Tape and reel information Marking Lead free PackingSPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Ye

7.1. Size:219K siemens
spd08p05.pdf

SPD08P05Preliminary dataSPU08P05SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeSPD08P05 -50 V -8 A 0.3 P-TO252 Q67000-. . . - . . .SPU08P05 -50 V -8 A 0.3 P-TO251 Q67000-. . . - . . .Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30

9.1. Size:614K infineon
spd08n50c3.pdf

SPD08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Worldwide best RDS(on) in TO-252PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPD08N50C3 PG-TO25

9.2. Size:138K infineon
spd08n10.pdf

SPD 08N10Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 100 VVDS N channelDrain-Source on-state resistance 0.3RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N10 P-TO252 Q67040-S4126 Tape and ReelSPU08N10

9.3. Size:134K infineon
spd08n05.pdf

SPD 08N05LSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.1RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N05L P-TO252 Q670

9.4. Size:244K inchange semiconductor
spd08n50c3.pdf

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3FEATURESStatic drain-source on-resistance:RDS(on)600mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

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