All MOSFET. SPD08P06PG Datasheet

 

SPD08P06PG MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD08P06PG

Marking Code: 08P06P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8.83 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 46 nS

Drain-Source Capacitance (Cd): 105 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO252

SPD08P06PG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD08P06PG Datasheet (PDF)

5.1. spd08p06p g.pdf Size:592K _infineon

SPD08P06PG
SPD08P06PG

SPD08P06P G SIPMOS® Power-Transistor Product Summary Features V -60 V DS • P-Channel R 0.3 Ω DS(on),max • Enhancement mode I -8.8 A D • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information Marking Lead free Packing SPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Ye

7.1. spd08p05.pdf Size:219K _siemens

SPD08P06PG
SPD08P06PG

SPD08P05 Preliminary data SPU08P05 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code SPD08P05 -50 V -8 A 0.3 Ω P-TO252 Q67000-. . . - . . . SPU08P05 -50 V -8 A 0.3 Ω P-TO251 Q67000-. . . - . . . Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °

 9.1. spd08n50c3.pdf Size:614K _infineon

SPD08P06PG
SPD08P06PG

SPD08N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 Ω • New revolutionary high voltage technology ID 7.6 A • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPD08N50C3 PG-TO25

9.2. spd08n10.pdf Size:138K _infineon

SPD08P06PG
SPD08P06PG

SPD 08N10 Preliminary Data SIPMOS Power Transistor Product Summary Features Drain source voltage 100 V VDS • N channel Drain-Source on-state resistance 0.3 RDS(on) Ω • Enhancement mode Continuous drain current 8.4 A ID • Avalanche rated • dv/dt rated Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N10 P-TO252 Q67040-S4126 Tape and Reel SPU08N10

 9.3. spd08n05.pdf Size:134K _infineon

SPD08P06PG
SPD08P06PG

SPD 08N05L SIPMOS PowerTransistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.1 RDS(on) Ω • Enhancement mode Continuous drain current 8.4 A ID • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD08N05L P-TO252 Q670

9.4. spd08n50c3.pdf Size:244K _inchange_semiconductor

SPD08P06PG
SPD08P06PG

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50

Datasheet: SPD04P10PG , SPD04P10PLG , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , IRFP4229 , SPD09P06PLG , SPD15P10PG , SPD15P10PLG , SPD18P06PG , SPD30N03S2L-07G , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG .

 

 
Back to Top