SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free PackingSPD08P06PG

SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliantType Package Tape and reel information Marking Lead free PackingSPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Ye

SPD08P05Preliminary dataSPU08P05SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeSPD08P05 -50 V -8 A 0.3 P-TO252 Q67000-. . . - . . .SPU08P05 -50 V -8 A 0.3 P-TO251 Q67000-. . . - . . .Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30

SPD08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Worldwide best RDS(on) in TO-252PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPD08N50C3 PG-TO25

SPD 08N10Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 100 VVDS N channelDrain-Source on-state resistance 0.3RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N10 P-TO252 Q67040-S4126 Tape and ReelSPU08N10

SPD 08N05LSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.1RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N05L P-TO252 Q670

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3FEATURESStatic drain-source on-resistance:RDS(on)600mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50