Справочник MOSFET. SPD08P06PG

 

SPD08P06PG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPD08P06PG
   Маркировка: 08P06P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 42 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.83 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 10 nC
   trⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SPD08P06PG

 

 

SPD08P06PG Datasheet (PDF)

 ..1. Size:599K  infineon
 spd08p06pg.pdf

SPD08P06PG SPD08P06PG

SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliant Qualified according to AEC Q101 Type Package Tape and reel information Marking Lead free PackingSPD08P06PG

 5.1. Size:592K  infineon
 spd08p06p g.pdf

SPD08P06PG SPD08P06PG

SPD08P06P G SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt ratedPG-TO252-3 175C operating temperature Pb-free lead finishing; RoHS compliantType Package Tape and reel information Marking Lead free PackingSPD08P06PG PG-TO252-3 1000 pcs / reel 08P06P Ye

 7.1. Size:219K  siemens
 spd08p05.pdf

SPD08P06PG SPD08P06PG

SPD08P05Preliminary dataSPU08P05SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeSPD08P05 -50 V -8 A 0.3 P-TO252 Q67000-. . . - . . .SPU08P05 -50 V -8 A 0.3 P-TO251 Q67000-. . . - . . .Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30

 9.1. Size:614K  infineon
 spd08n50c3.pdf

SPD08P06PG SPD08P06PG

SPD08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Worldwide best RDS(on) in TO-252PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPD08N50C3 PG-TO25

 9.2. Size:138K  infineon
 spd08n10.pdf

SPD08P06PG SPD08P06PG

SPD 08N10Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 100 VVDS N channelDrain-Source on-state resistance 0.3RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N10 P-TO252 Q67040-S4126 Tape and ReelSPU08N10

 9.3. Size:134K  infineon
 spd08n05.pdf

SPD08P06PG SPD08P06PG

SPD 08N05LSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.1RDS(on) Enhancement modeContinuous drain current 8.4 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD08N05L P-TO252 Q670

 9.4. Size:244K  inchange semiconductor
 spd08n50c3.pdf

SPD08P06PG SPD08P06PG

isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3FEATURESStatic drain-source on-resistance:RDS(on)600mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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