SPD30N03S2L-07G Todos los transistores

 

SPD30N03S2L-07G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD30N03S2L-07G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 740 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
   Paquete / Cubierta: TO252
 

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SPD30N03S2L-07G Datasheet (PDF)

 ..1. Size:651K  infineon
 spd30n03s2l-07.pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking

 2.1. Size:631K  infineon
 spd30n03s2l-10 .pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 2.2. Size:682K  infineon
 spd30n03s2l-20.pdf pdf_icon

SPD30N03S2L-07G

GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package

 2.3. Size:586K  infineon
 spd30n03s2l-10.pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

MOSTRAR MÁS

Otros transistores... SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG , SPD15P10PG , SPD15P10PLG , SPD18P06PG , IRF3205 , SPD30N03S2L-10G , SPD30N03S2L-20G , SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 .

History: BUK655R0-75C

 

 
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