SPD30N03S2L-07G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPD30N03S2L-07G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 740 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de SPD30N03S2L-07G MOSFET
- Selecciónⓘ de transistores por parámetros
SPD30N03S2L-07G datasheet
spd30n03s2l-07.pdf
SPD30N03S2L-07 G OptiMOS Power-Transistor Product Summary Feature VDS N-Channel 30 V Enhancement mode RDS(on) 6.7 m Logic Level ID 30 A PG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated . Pb-free lead plating; RoHS compliant Type Package Marking
spd30n03s2l-10 .pdf
SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
spd30n03s2l-20.pdf
G SPD30N03S2L-20 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 20 m Logic Level ID 30 A PG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Marking Type Package
spd30n03s2l-10.pdf
SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
Otros transistores... SPD07N60C3, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG, SPD15P10PLG, SPD18P06PG, IRF3205, SPD30N03S2L-10G, SPD30N03S2L-20G, SPD30P06PG, SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG, SPI80N06S-08, SPI07N60C3
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