All MOSFET. SPD30N03S2L-07G Datasheet

 

SPD30N03S2L-07G Datasheet and Replacement


   Type Designator: SPD30N03S2L-07G
   Marking Code: 2N03L07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: TO252
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SPD30N03S2L-07G Datasheet (PDF)

 ..1. Size:651K  infineon
 spd30n03s2l-07.pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking

 2.1. Size:631K  infineon
 spd30n03s2l-10 .pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 2.2. Size:682K  infineon
 spd30n03s2l-20.pdf pdf_icon

SPD30N03S2L-07G

GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package

 2.3. Size:586K  infineon
 spd30n03s2l-10.pdf pdf_icon

SPD30N03S2L-07G

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

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History: 2N65KG-TA3-T | SSF1020D | SSF11NS60 | AP3800YT | 2SK1198 | SRT10N230HD56 | AP9430AGYT-HF

Keywords - SPD30N03S2L-07G MOSFET datasheet

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