SPP06N60C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP06N60C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220

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SPP06N60C3 datasheet

 ..1. Size:222K  infineon
 spp06n60c3.pdf pdf_icon

SPP06N60C3

SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Co

 ..2. Size:247K  inchange semiconductor
 spp06n60c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N60C3 ISPP06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:445K  infineon
 spp06n80c3.pdf pdf_icon

SPP06N60C3

SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 8.2. Size:247K  inchange semiconductor
 spp06n80c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N80C3 ISPP06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO

MOSTRAR MÁS

Otros transistores... SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5, SPP04N80C3, AO3401, SPP06N80C3, SPP07N60C3, SPP07N60CFD, SPP07N60S5, SPP07N65C3, SPP08N50C3, SPP08N80C3, SPP08P06PH