All MOSFET. SPP06N60C3 Datasheet

 

SPP06N60C3 Datasheet and Replacement


   Type Designator: SPP06N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220
 

 SPP06N60C3 substitution

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SPP06N60C3 Datasheet (PDF)

 ..1. Size:222K  infineon
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SPP06N60C3

SPP06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO220-3-1 Extreme dv /dt rated Improved transconductanceType Package Ordering Co

 ..2. Size:247K  inchange semiconductor
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SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N60C3ISPP06N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.75Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:445K  infineon
spp06n80c3.pdf pdf_icon

SPP06N60C3

SPP06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 8.2. Size:247K  inchange semiconductor
spp06n80c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N80C3ISPP06N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.9Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABSO

Datasheet: SPP02N60S5 , SPP02N80C3 , SPP03N60C3 , SPP03N60S5 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , AO3400 , SPP06N80C3 , SPP07N60C3 , SPP07N60CFD , SPP07N60S5 , SPP07N65C3 , SPP08N50C3 , SPP08N80C3 , SPP08P06PH .

History: SI4622DY | VBZL80N03

Keywords - SPP06N60C3 MOSFET datasheet

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