SPP06N60C3 Specs and Replacement

Type Designator: SPP06N60C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO220

SPP06N60C3 substitution

- MOSFET ⓘ Cross-Reference Search

 

SPP06N60C3 datasheet

 ..1. Size:222K  infineon
 spp06n60c3.pdf pdf_icon

SPP06N60C3

SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Co... See More ⇒

 ..2. Size:247K  inchange semiconductor
 spp06n60c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N60C3 ISPP06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 8.1. Size:445K  infineon
 spp06n80c3.pdf pdf_icon

SPP06N60C3

SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe... See More ⇒

 8.2. Size:247K  inchange semiconductor
 spp06n80c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N80C3 ISPP06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO... See More ⇒

SHOW MORE

Detailed specifications: SPP02N60S5, SPP02N80C3, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5, SPP04N80C3, AO3401, SPP06N80C3, SPP07N60C3, SPP07N60CFD, SPP07N60S5, SPP07N65C3, SPP08N50C3, SPP08N80C3, SPP08P06PH

Keywords - SPP06N60C3 MOSFET specs

 SPP06N60C3 cross reference

 SPP06N60C3 equivalent finder

 SPP06N60C3 pdf lookup

 SPP06N60C3 substitution

 SPP06N60C3 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.