SPP06N60C3. Аналоги и основные параметры

Наименование производителя: SPP06N60C3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 74 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 200 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP06N60C3

- подборⓘ MOSFET транзистора по параметрам

 

SPP06N60C3 даташит

 ..1. Size:222K  infineon
 spp06n60c3.pdf pdf_icon

SPP06N60C3

SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.75 DS(on),max Ultra low gate charge I 6.2 A D Periodic avalanche rated High peak current capability Ultra low effective capacitances PG-TO220-3-1 Extreme dv /dt rated Improved transconductance Type Package Ordering Co

 ..2. Size:247K  inchange semiconductor
 spp06n60c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N60C3 ISPP06N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.75 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:445K  infineon
 spp06n80c3.pdf pdf_icon

SPP06N60C3

SPP06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 8.2. Size:247K  inchange semiconductor
 spp06n80c3.pdf pdf_icon

SPP06N60C3

isc N-Channel MOSFET Transistor SPP06N80C3 ISPP06N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.9 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABSO

ПОКАЗАТЬ ЕЩЁ

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