SPP06N60C3 - параметры транзистора MOSFET, его аналоги, datasheet

SPP06N60C3 Datasheet (PDF)

..1. Size:222K infineon
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SPP06N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.75DS(on),max Ultra low gate chargeI 6.2 AD Periodic avalanche rated High peak current capability Ultra low effective capacitancesPG-TO220-3-1 Extreme dv /dt rated Improved transconductanceType Package Ordering Co

..2. Size:247K inchange semiconductor
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isc N-Channel MOSFET Transistor SPP06N60C3ISPP06N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.75Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

8.1. Size:445K infineon
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SPP06N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.9DS(on)max Extreme dv/dt ratedQ 31 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

8.2. Size:247K inchange semiconductor
spp06n80c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPP06N80C3ISPP06N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.9Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABSO

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