SPP15P10PLH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP15P10PLH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 128 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 272 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: TO220

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SPP15P10PLH datasheet

 ..1. Size:761K  infineon
 spp15p10pl spp15p10plh.pdf pdf_icon

SPP15P10PLH

SPP15P10PL H SIPMOS Power-Transistor Product Summary Features V -100 V DS P-Channel R 0.20 DS(on),max Enhancement mode I -15 A D logic level Avalanche rated PG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Marking Lead free Packing SPP15P10PL H PG-TO220-3

 5.1. Size:639K  1
 spd15p10pg spp15p10pg.pdf pdf_icon

SPP15P10PLH

SPP15P10P G SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 0.24 DS(on),max Enhancement mode I -15 A D Normal level Avalanche rated PG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliant Type Package Marking Lead free Packing SPP15P10P G PG-TO220-3 15P10P Yes Non dry SPD15P10P G PG-TO252-3 15P10P Yes N

 5.2. Size:824K  infineon
 spp15p10p spp15p10ph.pdf pdf_icon

SPP15P10PLH

SPP15P10P H SIPMOS Small-Signal-Transistor Product Summary Features V -100 V DS P-Channel R 0.24 DS(on),max Enhancement mode I -15 A D Normal level Avalanche rated PG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249_2_21 Qualified according to AEC Q101 Type Package Marking Lead free Packing SPP15P10P H PG-

 5.3. Size:243K  inchange semiconductor
 spp15p10p.pdf pdf_icon

SPP15P10PLH

isc P-Channel MOSFET Transistor SPP15P10P ISPP15P10P FEATURES Static drain-source on-resistance RDS(on) 0.24 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and

MOSTRAR MÁS

Otros transistores... SPP11N60S5, SPP11N65C3, SPP11N80C3, SPP12N50C3, SPP15N60C3, SPP15N60CFD, SPP15N65C3, SPP15P10PG, IRFP450, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3