All MOSFET. SPP15P10PLH Datasheet

 

SPP15P10PLH MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP15P10PLH
   Marking Code: 15P10PL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 128 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 272 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
   Package: TO220

 SPP15P10PLH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP15P10PLH Datasheet (PDF)

 ..1. Size:761K  infineon
spp15p10pl spp15p10plh.pdf

SPP15P10PLH SPP15P10PLH

SPP15P10PLH SIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PL H PG-TO220-3

 5.1. Size:639K  1
spd15p10pg spp15p10pg.pdf

SPP15P10PLH SPP15P10PLH

SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N

 5.2. Size:824K  infineon
spp15p10p spp15p10ph.pdf

SPP15P10PLH SPP15P10PLH

SPP15P10P HSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249_2_21 Qualified according to AEC Q101 Type Package Marking Lead free PackingSPP15P10PH PG-

 5.3. Size:243K  inchange semiconductor
spp15p10p.pdf

SPP15P10PLH SPP15P10PLH

isc P-Channel MOSFET Transistor SPP15P10PISPP15P10PFEATURESStatic drain-source on-resistance:RDS(on)0.24Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient and

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