SPP17N80C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPP17N80C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 94 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SPP17N80C3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SPP17N80C3 datasheet

 ..1. Size:977K  infineon
 spp17n80c3 spa17n80c3.rev.2.7.pdf pdf_icon

SPP17N80C3

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..2. Size:491K  infineon
 spp17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.29 DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..3. Size:779K  infineon
 spp17n80c3 spa17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..4. Size:248K  inchange semiconductor
 spp17n80c3.pdf pdf_icon

SPP17N80C3

isc N-Channel MOSFET Transistor SPP17N80C3 ISPP17N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.29 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS

MOSTRAR MÁS

Otros transistores... SPP11N80C3, SPP12N50C3, SPP15N60C3, SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, AO4407, SPP18P06PH, SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD