SPP17N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPP17N80C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 227 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 94 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
Paquete / Cubierta: TO220
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SPP17N80C3 Datasheet (PDF)
spp17n80c3 spa17n80c3.rev.2.7.pdf
SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
spp17n80c3.pdf
SPP17N80C3CoolMOS Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.29DS(on)max Extreme dv/dt ratedQ 88 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff
spp17n80c3 spa17n80c3.pdf
SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
spp17n80c3.pdf
isc N-Channel MOSFET Transistor SPP17N80C3ISPP17N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.29Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918