SPP17N80C3 Todos los transistores

 

SPP17N80C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPP17N80C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de SPP17N80C3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPP17N80C3 Datasheet (PDF)

 ..1. Size:977K  infineon
 spp17n80c3 spa17n80c3.rev.2.7.pdf pdf_icon

SPP17N80C3

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..2. Size:491K  infineon
 spp17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3CoolMOS Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.29DS(on)max Extreme dv/dt ratedQ 88 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..3. Size:779K  infineon
 spp17n80c3 spa17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..4. Size:248K  inchange semiconductor
 spp17n80c3.pdf pdf_icon

SPP17N80C3

isc N-Channel MOSFET Transistor SPP17N80C3ISPP17N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.29Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS

MOSTRAR MÁS

Otros transistores... SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , IRFP450 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD .

History: QM3202M3 | UPA2820T1S | IPP65R225C7 | FQA16N50 | OSG70R750AF | DMP3028LSD | UPA2813T1L

 

 
Back to Top

 


 
.