All MOSFET. SPP17N80C3 Datasheet

 

SPP17N80C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPP17N80C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 91 nC

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO220

SPP17N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SPP17N80C3 Datasheet (PDF)

1.1. spp17n80c3 spa17n80c3.rev.2.7.pdf Size:977K _infineon

SPP17N80C3 SPP17N80C3

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 ? New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-220-3-31: Fully isolated

1.2. spp17n80c3 rev2.91.pdf Size:491K _infineon

SPP17N80C3 SPP17N80C3

SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

 

Datasheet: SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , IRF1010E , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD .

 
Back to Top