All MOSFET. SPP17N80C3 Datasheet

 

SPP17N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP17N80C3
   Marking Code: 17N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO220

 SPP17N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP17N80C3 Datasheet (PDF)

 ..1. Size:977K  infineon
 spp17n80c3 spa17n80c3.rev.2.7.pdf

SPP17N80C3 SPP17N80C3

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..2. Size:491K  infineon
 spp17n80c3.pdf

SPP17N80C3 SPP17N80C3

SPP17N80C3CoolMOS Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.29DS(on)max Extreme dv/dt ratedQ 88 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..3. Size:779K  infineon
 spp17n80c3 spa17n80c3.pdf

SPP17N80C3 SPP17N80C3

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22

 ..4. Size:248K  inchange semiconductor
 spp17n80c3.pdf

SPP17N80C3 SPP17N80C3

isc N-Channel MOSFET Transistor SPP17N80C3ISPP17N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.29Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS

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History: SQ3427EV

 

 
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