SPP17N80C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
Maximum Drain Current |Id|: 17 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 91 nC
Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm
Package: TO220
SPP17N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP17N80C3 Datasheet (PDF)
1.1. spp17n80c3 rev2.91.pdf 
Size:491K _infineon
SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances
1.2. spp17n80c3 spa17n80c3.rev.2.7.pdf Size:977K _infineon
SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 ? New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-220-3-31: Fully isolated
1.3. spp17n80c3.pdf Size:248K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPP17N80C3，ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABS
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