SPP17N80C3 PDF and Equivalents Search

 

SPP17N80C3 Specs and Replacement

Type Designator: SPP17N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 94 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO220

SPP17N80C3 substitution

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SPP17N80C3 datasheet

 ..1. Size:977K  infineon
spp17n80c3 spa17n80c3.rev.2.7.pdf pdf_icon

SPP17N80C3

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22... See More ⇒

 ..2. Size:491K  infineon
spp17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.29 DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff... See More ⇒

 ..3. Size:779K  infineon
spp17n80c3 spa17n80c3.pdf pdf_icon

SPP17N80C3

SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22... See More ⇒

 ..4. Size:248K  inchange semiconductor
spp17n80c3.pdf pdf_icon

SPP17N80C3

isc N-Channel MOSFET Transistor SPP17N80C3 ISPP17N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.29 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS... See More ⇒

Detailed specifications: SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , AO4407 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD .

Keywords - SPP17N80C3 MOSFET specs

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 SPP17N80C3 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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