All MOSFET. SPP17N80C3 Datasheet


SPP17N80C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPP17N80C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 91 nC

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO220

SPP17N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SPP17N80C3 Datasheet (PDF)

1.1. spp17n80c3 rev2.91.pdf Size:491K _infineon


SPP17N80C3 CoolMOS Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25C 0.29 ? DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances

1.2. spp17n80c3 spa17n80c3.rev.2.7.pdf Size:977K _infineon


SPP17N80C3 SPA17N80C3 Cool MOS Power Transistor VDS 800 V Feature RDS(on) 0.29 ? New revolutionary high voltage technology ID 17 A Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-220-3-31: Fully isolated

 1.3. spp17n80c3.pdf Size:248K _inchange_semiconductor


isc N-Channel MOSFET Transistor SPP17N80C3,ISPP17N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances ·ABS

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