SPW11N60S5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW11N60S5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 610 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de SPW11N60S5 MOSFET
- Selecciónⓘ de transistores por parámetros
SPW11N60S5 datasheet
spw11n60s5.pdf
SPW11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 Maximum Ratings Para
spw11n60s5.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60S5 ISPW11N60S5 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
spw11n60cfd.pdf
SPW11N60CFD C I MOS P wer TransIst r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade
Otros transistores... SPU03N60S5, SPU04N60C3, SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3, SPW11N60CFD, IRFZ48N, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD
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