SPW11N60S5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW11N60S5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 610 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SPW11N60S5 MOSFET
SPW11N60S5 Datasheet (PDF)
spw11n60s5.pdf

SPW11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW11N60S5 PG-TO247 Q67040-S4239 11N60S5Maximum RatingsPara
spw11n60s5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60S5ISPW11N60S5FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
spw11n60cfd.pdf

SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade
Otros transistores... SPU03N60S5 , SPU04N60C3 , SPU04N60S5 , SPU07N60C3 , SPU07N60S5 , SPW07N60CFD , SPW11N60C3 , SPW11N60CFD , 60N06 , SPW11N80C3 , SPW12N50C3 , SPW15N60C3 , SPW15N60CFD , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD .
History: SFF27N50M | UPA2794AGR | HFS5N65U | GSM4998 | BLP038N10GL-B | CEU02N7G | FXN13N45F
History: SFF27N50M | UPA2794AGR | HFS5N65U | GSM4998 | BLP038N10GL-B | CEU02N7G | FXN13N45F



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet | irf640 | irf840 | irf740