SPW11N60S5 MOSFET Datasheet: N-Ch, 600V, 11A. Full specification with pinout and replacement list

SPW11N60S5 Specs and Replacement

Type Designator: SPW11N60S5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO247

SPW11N60S5 substitution

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SPW11N60S5 datasheet

..1. Size:918K infineon
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SPW11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW11N60S5 PG-TO247 Q67040-S4239 11N60S5 Maximum Ratings Para... See More ⇒

..2. Size:242K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW11N60S5 ISPW11N60S5 FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

6.1. Size:1394K infineon
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SPW11N60CFD C I MOS P wer TransIst r VDS @ Tjmax 650 V DS Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A 11 Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated /d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade ... See More ⇒

6.2. Size:790K infineon
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