Справочник MOSFET. SPW11N60S5

 

SPW11N60S5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPW11N60S5
   Маркировка: 11N60S5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 41.5 nC
   trⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SPW11N60S5

 

 

SPW11N60S5 Datasheet (PDF)

 ..1. Size:918K  infineon
 spw11n60s5.pdf

SPW11N60S5 SPW11N60S5

SPW11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW11N60S5 PG-TO247 Q67040-S4239 11N60S5Maximum RatingsPara

 ..2. Size:242K  inchange semiconductor
 spw11n60s5.pdf

SPW11N60S5 SPW11N60S5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60S5ISPW11N60S5FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 6.1. Size:1394K  infineon
 spw11n60cfd.pdf

SPW11N60S5 SPW11N60S5

SPW11N60CFDCI MOS Pwer TransIstrVDS @ Tjmax 650 VDSFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A11 Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated/d High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade

 6.2. Size:790K  infineon
 spw11n60c3.pdf

SPW11N60S5 SPW11N60S5

VDS Tjmax G G

 6.3. Size:243K  inchange semiconductor
 spw11n60cfd.pdf

SPW11N60S5 SPW11N60S5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60CFDISPW11N60CFDFEATURESStatic drain-source on-resistance:RDS(on)440mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 6.4. Size:243K  inchange semiconductor
 spw11n60c3.pdf

SPW11N60S5 SPW11N60S5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW11N60C3ISPW11N60C3FEATURESStatic drain-source on-resistance:RDS(on)380mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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