SPW15N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW15N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 540 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SPW15N60C3 MOSFET
SPW15N60C3 Datasheet (PDF)
spw15n60c3.pdf
isc N-Channel MOSFET Transistor SPW15N60C3ISPW15N60C3FEATURESStatic drain-source on-resistance:RDS(on)280mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Improved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6
spw15n60cfd.pdf
SPW15N60CFDTMCIMOSTM #:A0D9:R 0. 0 DS(on) maxV "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G;>:9 688DG9>CC
spw15n60cfd.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW15N60CFDISPW15N60CFDFEATURESStatic drain-source on-resistance:RDS(on)330mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Otros transistores... SPU07N60C3 , SPU07N60S5 , SPW07N60CFD , SPW11N60C3 , SPW11N60CFD , SPW11N60S5 , SPW11N80C3 , SPW12N50C3 , EMB04N03H , SPW15N60CFD , SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 .
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