SPW15N60C3 Specs and Replacement

Type Designator: SPW15N60C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO247

SPW15N60C3 substitution

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SPW15N60C3 datasheet

 ..1. Size:743K  infineon
 spw15n60c3.pdf pdf_icon

SPW15N60C3

VDS Tjmax G G ... See More ⇒

 ..2. Size:244K  inchange semiconductor
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SPW15N60C3

isc N-Channel MOSFET Transistor SPW15N60C3 ISPW15N60C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 6... See More ⇒

 5.1. Size:700K  infineon
 spw15n60cfd.pdf pdf_icon

SPW15N60C3

SPW15N60CFD TM C IMOSTM # A0D9 R 0. 0 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 688DG9>CC... See More ⇒

 5.2. Size:243K  inchange semiconductor
 spw15n60cfd.pdf pdf_icon

SPW15N60C3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW15N60CFD ISPW15N60CFD FEATURES Static drain-source on-resistance RDS(on) 330m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

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Detailed specifications: SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3, SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, IRLB3034, SPW15N60CFD, SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3

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