SPW32N50C3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPW32N50C3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 284 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 1700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de SPW32N50C3 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SPW32N50C3 datasheet

 ..1. Size:822K  infineon
 spw32n50c3.pdf pdf_icon

SPW32N50C3

SPW32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.11 New revolutionary high voltage technology ID 32 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 Maximum Rating

 ..2. Size:244K  inchange semiconductor
 spw32n50c3.pdf pdf_icon

SPW32N50C3

isc N-Channel MOSFET Transistor SPW32N50C3 ISPW32N50C3 FEATURES Static drain-source on-resistance RDS(on) 110m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50

Otros transistores... SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD, 60N06, SPW35N60C3, SPW35N60CFD, SPW47N60C3, SPW47N60CFD, SPW47N65C3, SPW52N50C3, IRF1010EZ, IRF1010EZL