SPW32N50C3 Todos los transistores

 

SPW32N50C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPW32N50C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 284 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 1700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO247
 

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SPW32N50C3 Datasheet (PDF)

 ..1. Size:822K  infineon
 spw32n50c3.pdf pdf_icon

SPW32N50C3

SPW32N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.11 New revolutionary high voltage technologyID 32 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW32N50C3 PG-TO247 Q67040-S4613 32N50C3Maximum Rating

 ..2. Size:244K  inchange semiconductor
 spw32n50c3.pdf pdf_icon

SPW32N50C3

isc N-Channel MOSFET Transistor SPW32N50C3ISPW32N50C3FEATURESStatic drain-source on-resistance:RDS(on)110mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

Otros transistores... SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 , SPW24N60CFD , AO4468 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL .

History: WFF12N60 | NCEP020N85 | NCEP0218K | 2SK538 | 2SK788 | SSF18NS60 | FMW47N60S1HF

 

 
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