All MOSFET. SPW32N50C3 Datasheet

 

SPW32N50C3 Datasheet and Replacement


   Type Designator: SPW32N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 284 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO247
 

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SPW32N50C3 Datasheet (PDF)

 ..1. Size:822K  infineon
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SPW32N50C3

SPW32N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.11 New revolutionary high voltage technologyID 32 A Ultra low gate chargePG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPW32N50C3 PG-TO247 Q67040-S4613 32N50C3Maximum Rating

 ..2. Size:244K  inchange semiconductor
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SPW32N50C3

isc N-Channel MOSFET Transistor SPW32N50C3ISPW32N50C3FEATURESStatic drain-source on-resistance:RDS(on)110mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 50

Datasheet: SPW16N50C3 , SPW17N80C3 , SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 , SPW24N60CFD , AO4468 , SPW35N60C3 , SPW35N60CFD , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL .

History: SRC60R078BS2

Keywords - SPW32N50C3 MOSFET datasheet

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