SPW32N50C3 Specs and Replacement
Type Designator: SPW32N50C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 284 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO247
SPW32N50C3 substitution
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SPW32N50C3 datasheet
spw32n50c3.pdf
SPW32N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.11 New revolutionary high voltage technology ID 32 A Ultra low gate charge PG-TO247 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 Maximum Rating... See More ⇒
spw32n50c3.pdf
isc N-Channel MOSFET Transistor SPW32N50C3 ISPW32N50C3 FEATURES Static drain-source on-resistance RDS(on) 110m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50... See More ⇒
Detailed specifications: SPW16N50C3, SPW17N80C3, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD, 60N06, SPW35N60C3, SPW35N60CFD, SPW47N60C3, SPW47N60CFD, SPW47N65C3, SPW52N50C3, IRF1010EZ, IRF1010EZL
Keywords - SPW32N50C3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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