SPW35N60CFD Todos los transistores

 

SPW35N60CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPW35N60CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 1400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.118 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de SPW35N60CFD MOSFET

   - Selección ⓘ de transistores por parámetros

 

SPW35N60CFD Datasheet (PDF)

 ..1. Size:943K  infineon
 spw35n60cfd.pdf pdf_icon

SPW35N60CFD

SPW35N60CFDTMCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD DU * 9K F9JC@IH=CB5FM

 ..2. Size:245K  inchange semiconductor
 spw35n60cfd.pdf pdf_icon

SPW35N60CFD

isc N-Channel MOSFET Transistor SPW35N60CFDISPW35N60CFDFEATURESStatic drain-source on-resistance:RDS(on)118mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

 5.1. Size:760K  infineon
 spw35n60c3.pdf pdf_icon

SPW35N60CFD

SPW35N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.1DS(on),max Ultra low gate chargeI 34.6 AD Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitancesPG-TO247 Improved transconductanceType Package Ordering Code MarkingSPW35N60C3 PG-TO247 Q6704

 5.2. Size:244K  inchange semiconductor
 spw35n60c3.pdf pdf_icon

SPW35N60CFD

isc N-Channel MOSFET Transistor SPW35N60C3ISPW35N60C3FEATURESStatic drain-source on-resistance:RDS(on)100mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

MOSTRAR MÁS

Otros transistores... SPW20N60C3 , SPW20N60CFD , SPW20N60S5 , SPW21N50C3 , SPW24N60C3 , SPW24N60CFD , SPW32N50C3 , SPW35N60C3 , IRF730 , SPW47N60C3 , SPW47N60CFD , SPW47N65C3 , SPW52N50C3 , IRF1010EZ , IRF1010EZL , IRF1010EZS , IRF1010Z .

History: FQB9N08TM | IRF5800 | RJK03A4DPA

 

 
Back to Top

 


 
.