SPW35N60CFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPW35N60CFD
Marking Code: 35N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 313
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 34.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 163
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 1400
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.118
Ohm
Package:
TO247
SPW35N60CFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPW35N60CFD
Datasheet (PDF)
..1. Size:943K infineon
spw35n60cfd.pdf
SPW35N60CFDTMCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD DU * 9K F9JC@IH=CB5FM
..2. Size:245K inchange semiconductor
spw35n60cfd.pdf
isc N-Channel MOSFET Transistor SPW35N60CFDISPW35N60CFDFEATURESStatic drain-source on-resistance:RDS(on)118mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
5.1. Size:760K infineon
spw35n60c3.pdf
SPW35N60C3CoolMOSTM Power TransistorProduct SummaryFeaturesV @ T 650 VDS j,max New revolutionary high voltage technologyR 0.1DS(on),max Ultra low gate chargeI 34.6 AD Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitancesPG-TO247 Improved transconductanceType Package Ordering Code MarkingSPW35N60C3 PG-TO247 Q6704
5.2. Size:244K inchange semiconductor
spw35n60c3.pdf
isc N-Channel MOSFET Transistor SPW35N60C3ISPW35N60C3FEATURESStatic drain-source on-resistance:RDS(on)100mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60
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