SPW47N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SPW47N60C3
   Código: 47N60C3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 415 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 47 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
   Carga de la puerta (Qg): 252 nC
   Tiempo de subida (tr): 27 nS
   Conductancia de drenaje-sustrato (Cd): 2200 pF
   Resistencia entre drenaje y fuente RDS(on): 0.07 Ohm
   Paquete / Cubierta: TO247

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SPW47N60C3 Datasheet (PDF)

..1. Size:828K infineon
spw47n60c3.pdf

VDS Tjmax G G

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spw47n60c3.pdf

isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

5.1. Size:616K infineon
spw47n60cfd.pdf

SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77

5.2. Size:243K inchange semiconductor
spw47n60cfd.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

7.1. Size:737K infineon
spw47n65c3.pdf

SPW47N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Worldwide best R in TO247ds,onR 0.07DS(on),max Low gate chargeQ 255 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247-3-1Type Package MarkingSPW47N65C3 PG-TO247

7.2. Size:245K inchange semiconductor
spw47n65c3.pdf

isc N-Channel MOSFET Transistor SPW47N65C3ISPW47N65C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

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