SPW47N60C3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPW47N60C3
Código: 47N60C3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 415 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 VQgⓘ - Carga de la puerta: 252 nC
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 2200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO247
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SPW47N60C3 Datasheet (PDF)
spw47n60c3.pdf
isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600
spw47n60cfd.pdf
SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77
spw47n60cfd.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
spw47n65c3.pdf
SPW47N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Worldwide best R in TO247ds,onR 0.07DS(on),max Low gate chargeQ 255 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247-3-1Type Package MarkingSPW47N65C3 PG-TO247
spw47n65c3.pdf
isc N-Channel MOSFET Transistor SPW47N65C3ISPW47N65C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
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