SPW47N60C3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPW47N60C3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 415 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 47 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 2200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO247

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SPW47N60C3 datasheet

 ..1. Size:828K  infineon
 spw47n60c3.pdf pdf_icon

SPW47N60C3

VDS Tjmax G G

 ..2. Size:244K  inchange semiconductor
 spw47n60c3.pdf pdf_icon

SPW47N60C3

isc N-Channel MOSFET Transistor SPW47N60C3 ISPW47N60C3 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 5.1. Size:616K  infineon
 spw47n60cfd.pdf pdf_icon

SPW47N60C3

SPW47N60CFD TM C IMOSTM "9@/; %;+877+;B Features V - R (7H C7GA>FE;A@3CJ ;9 GA>E397 E75 @A>A9J DS(on) max R $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A 46 D R IEC7?7>J >AH C7G7CD7 C75AG7CJ 5 3C97 R / >EC3 >AH 93E7 5 3C97 PG TO247 R IEC7?7 6v /dt C3E76 /d R #;9 B73= 5FCC7@E 53B34;>;EJ R *7C;A6;5 3G3>3@5 7 C3E76 R + F3>;8;76 355AC6;@9 EA % R *4 8C77

 5.2. Size:243K  inchange semiconductor
 spw47n60cfd.pdf pdf_icon

SPW47N60C3

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW47N60CFD ISPW47N60CFD FEATURES Static drain-source on-resistance RDS(on) 83m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

MOSTRAR MÁS

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