SPW47N60C3 Todos los transistores

VDS Tjmax G G

isc N-Channel MOSFET Transistor SPW47N60C3 ISPW47N60C3 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

SPW47N60CFD TM C IMOSTM "9@/; %;+877+;B Features V - R (7H C7GA>FE;A@3CJ ;9 GA>E397 E75 @A>A9J DS(on) max R $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A 46 D R IEC7?7>J >AH C7G7CD7 C75AG7CJ 5 3C97 R / >EC3 >AH 93E7 5 3C97 PG TO247 R IEC7?7 6v /dt C3E76 /d R #;9 B73= 5FCC7@E 53B34;>;EJ R *7C;A6;5 3G3>3@5 7 C3E76 R + F3>;8;76 355AC6;@9 EA % R *4 8C77

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW47N60CFD ISPW47N60CFD FEATURES Static drain-source on-resistance RDS(on) 83m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

SPW47N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Worldwide best R in TO247 ds,on R 0.07 DS(on),max Low gate charge Q 255 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247-3-1 Type Package Marking SPW47N65C3 PG-TO247

isc N-Channel MOSFET Transistor SPW47N65C3 ISPW47N65C3 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage