All MOSFET. SPW47N60C3 Datasheet

 

SPW47N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPW47N60C3
   Marking Code: 47N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 415 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 252 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247

 SPW47N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPW47N60C3 Datasheet (PDF)

 ..1. Size:828K  infineon
 spw47n60c3.pdf

SPW47N60C3 SPW47N60C3

VDS Tjmax G G

 ..2. Size:244K  inchange semiconductor
 spw47n60c3.pdf

SPW47N60C3 SPW47N60C3

isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 5.1. Size:616K  infineon
 spw47n60cfd.pdf

SPW47N60C3 SPW47N60C3

SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77

 5.2. Size:243K  inchange semiconductor
 spw47n60cfd.pdf

SPW47N60C3 SPW47N60C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 7.1. Size:737K  infineon
 spw47n65c3.pdf

SPW47N60C3 SPW47N60C3

SPW47N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Worldwide best R in TO247ds,onR 0.07DS(on),max Low gate chargeQ 255 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO247-3-1Type Package MarkingSPW47N65C3 PG-TO247

 7.2. Size:245K  inchange semiconductor
 spw47n65c3.pdf

SPW47N60C3 SPW47N60C3

isc N-Channel MOSFET Transistor SPW47N65C3ISPW47N65C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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