BF556C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF556C

Tipo de FET: FET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.018 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 0.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm

Encapsulados: SOT23

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BF556C datasheet

 ..1. Size:68K  philips
 bf556a bf556b bf556c 2.pdf pdf_icon

BF556C

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha

 ..2. Size:71K  philips
 bf556a bf556b bf556c.pdf pdf_icon

BF556C

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2

 9.1. Size:100K  philips
 bf556a.pdf pdf_icon

BF556C

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha

Otros transistores... BF511, BF512, BF513, BF545A, BF545B, BF545C, BF556A, BF556B, IRF530, BF805, BF861A, BF861B, BF861C, BF862, BF900, BF901, BF901R