BF556C Datasheet. Specs and Replacement

Type Designator: BF556C  📄📄 

Type of Transistor: FET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.018 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 0.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm

Package: SOT23

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BF556C datasheet

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BF556C

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha... See More ⇒

 ..2. Size:71K  philips
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BF556C

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 ... See More ⇒

 9.1. Size:100K  philips
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BF556C

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification 1996 Jul 29 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction BF556A; BF556B; BF556C field-effect transistors FEATURES Low leakage level (typ. 500 fA) ha... See More ⇒

Detailed specifications: BF511, BF512, BF513, BF545A, BF545B, BF545C, BF556A, BF556B, 12N60, BF805, BF861A, BF861B, BF861C, BF862, BF900, BF901, BF901R

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