All MOSFET. BF556C Datasheet

 

BF556C Datasheet and Replacement


   Type Designator: BF556C
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.018 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: SOT23
 

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BF556C Datasheet (PDF)

 ..1. Size:68K  philips
 bf556a bf556b bf556c 2.pdf pdf_icon

BF556C

DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha

 ..2. Size:71K  philips
 bf556a bf556b bf556c.pdf pdf_icon

BF556C

BF556A; BF556B; BF556CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2

 9.1. Size:100K  philips
 bf556a.pdf pdf_icon

BF556C

DISCRETE SEMICONDUCTORSDATA SHEETBF556A; BF556B; BF556CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF556A; BF556B; BF556Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)ha

Datasheet: BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A , BF556B , AO4407 , BF805 , BF861A , BF861B , BF861C , BF862 , BF900 , BF901 , BF901R .

History: HUF75229P3

Keywords - BF556C MOSFET datasheet

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