IRF1324S-7P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1324S-7P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 24 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 429 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 240 nS
Cossⓘ - Capacitancia de salida: 3380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
Encapsulados: TO263-7
Búsqueda de reemplazo de IRF1324S-7P MOSFET
- Selecciónⓘ de transistores por parámetros
IRF1324S-7P datasheet
irf1324s-7ppbf.pdf
PD - 97263B IRF1324S-7PPbF HEXFET Power MOSFET D Applications VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 0.8m l Uninterruptible Power Supply max. 1.0m l High Speed Power Switching G ID (Silicon Limited) 429A l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D
auirf1324s-7p.pdf
AUTOMOTIVE GRADE AUIRF1324S-7P Features VDSS 24V Advanced Process Technology RDS(on) typ. 0.8m Ultra Low On-Resistance max. 175 C Operating Temperature 1.0m Fast Switching ID (Silicon Limited) 429A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 240A Lead-Free, RoHS Compliant Automotive Qualified * Description
auirf1324strl.pdf
PD - 97483 AUIRF1324S AUTOMOTIVE GRADE AUIRF1324L HEXFET Power MOSFET Features Advanced Process Technology D VDSS 24V Ultra Low On-Resistance Dynamic dV/dT Rating RDS(on) typ. 1.3m 175 C Operating Temperature G ID (Silicon Limited) Fast Switching 340A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant S Automotive Qua
irf1324lpbf irf1324spbf.pdf
PD - 97353A IRF1324SPbF IRF1324LPbF HEXFET Power MOSFET Applications D VDSS 24V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.3m l Uninterruptible Power Supply l High Speed Power Switching max. 1.65m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 340A ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynami
Otros transistores... IRF1018E, IRF1018ES, IRF1018ESL, IRF1104L, IRF1104S, IRF1324, IRF1324L, IRF1324S, IRFB4227, IRF1404L, IRF1404S, IRF1404Z, IRF1404ZG, IRF1404ZL, IRF1404ZS, IRF1405, IRF1405L
History: AO4821 | IRF1404ZS
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