IRF1324S-7P MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF1324S-7P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 429 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 240 nS
   Cossⓘ - Output Capacitance: 3380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: TO263-7

IRF1324S-7P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS