IRF1405 Todos los transistores

 

IRF1405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1405

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 133 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 170 nC

Resistencia drenaje-fuente RDS(on): 0.0053 Ohm

Empaquetado / Estuche: TO220AB

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IRF1405 Datasheet (PDF)

1.1. irf1405z.pdf Size:179K _international_rectifier

IRF1405
IRF1405

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) = 4.9mΩ l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processin

1.2. irf1405pbf.pdf Size:258K _international_rectifier

IRF1405
IRF1405

PD - 94969B IRF1405PbF Typical Applications HEXFET® Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3mΩ l Dynamic dv/dt Rating G l 175°C Operating Temperature ID = 169A† l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

 1.3. auirf1405zs-7p.pdf Size:247K _international_rectifier

IRF1405
IRF1405

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the la

1.4. irf1405lpbf irf1405spbf.pdf Size:308K _international_rectifier

IRF1405
IRF1405

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3mΩ Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A† 175°C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFE

 1.5. auirf1405zstrl.pdf Size:313K _international_rectifier

IRF1405
IRF1405

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175°C Operating Temperature l Fast Switching RDS(on) max. 4.9mΩ G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

1.6. irf1405s.pdf Size:154K _international_rectifier

IRF1405
IRF1405

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET® Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3mΩ Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching R

1.7. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _international_rectifier

IRF1405
IRF1405

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9mΩ l Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ex

1.8. irf1405.pdf Size:116K _international_rectifier

IRF1405
IRF1405

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET® Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3mΩ Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175°C Operating Temperature Fast Switching Repetitive A

1.9. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _international_rectifier

IRF1405
IRF1405

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the latest pro

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