IRF1405 Todos los transistores

PD - 94969B IRF1405PbF Typical Applications HEXFET Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3m l Dynamic dv/dt Rating G l 175 C Operating Temperature ID = 169A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive A

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405 IIRF1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 4.9m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processin

PD - 97486A AUIRF1405ZS AUTOMOTIVE GRADE AUIRF1405ZL Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V(BR)DSS 55V l 175 C Operating Temperature l Fast Switching RDS(on) max. 4.9m G l Repetitive Avalanche Allowed up to Tjmax S ID 150A l Lead-Free, RoHS Compliant l Automotive Qualified * D D Description Specifically designed for

PD - 97691A AUTOMOTIVE GRADE AUIRF1405 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dv/dt Rating RDS(on) typ. 4.6m l 175 C Operating Temperature l Fast Switching max 5.3m G l Fully Avalanche Rated ID (Silicon Limited) 169A l Repetitive Avalanche Allowed S up to Tjmax ID (Package Limited) 75A l Lead-Free,

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching R

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest pro

AUTOMOTIVE GRADE AUIRF1405ZS-7P Features HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A l Automotive Qualified * S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the la

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A 175 C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET Power MOSFE

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405Z IIRF1405Z FEATURES Static drain-source on-resistance RDS(on) 4.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

Isc N-Channel MOSFET Transistor IRF1405ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol