IRF1405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 ..1. Size:258K  international rectifier
 irf1405pbf.pdf

PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF

 ..2. Size:116K  international rectifier
 irf1405.pdf

PD -93991AAUTOMOTIVE MOSFETIRF1405Typical Applications Electric Power Steering (EPS)HEXFET Power MOSFET Anti-lock Braking System (ABS)D Wiper ControlVDSS = 55V Climate Control Power DoorBenefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-ResistanceID = 169AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive A

 ..3. Size:258K  infineon
 irf1405pbf.pdf

PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF

 ..4. Size:246K  inchange semiconductor
 irf1405.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405IIRF1405FEATURESStatic drain-source on-resistance:RDS(on) 5.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.1. Size:179K  international rectifier
 irf1405z.pdf

PD - 94645AUTOMOTIVE MOSFETIRF1405ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 4.9ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processin

 0.2. Size:247K  international rectifier
 auirf1405zs-7p.pdf

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 0.3. Size:308K  international rectifier
 irf1405lpbf irf1405spbf.pdf

PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE

 0.4. Size:313K  international rectifier
 auirf1405zstrl.pdf

PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for

 0.5. Size:154K  international rectifier
 irf1405s.pdf

PD -93992IRF1405SAUTOMOTIVE MOSFETIRF1405LTypical ApplicationsHEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS)D Wiper Control VDSS = 55V Climate Control Power DoorRDS(on) = 5.3mBenefitsG Advanced Process TechnologyID = 131AV Ultra Low On-ResistanceS Dynamic dv/dt Rating 175C Operating Temperature Fast Switching R

 0.6. Size:396K  international rectifier
 irf1405zlpbf irf1405zpbf irf1405zspbf.pdf

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 0.7. Size:212K  international rectifier
 auirf1405.pdf

PD - 97691AAUTOMOTIVE GRADEAUIRF1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dv/dt RatingRDS(on) typ.4.6ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)169Al Repetitive Avalanche AllowedSup to TjmaxID (Package Limited)75Al Lead-Free,

 0.8. Size:319K  international rectifier
 irf1405zl-7ppbf irf1405zs-7ppbf.pdf

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro

 0.9. Size:345K  infineon
 auirf1405zs auirf1405zl.pdf

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

 0.10. Size:247K  infineon
 auirf1405zs-7p.pdf

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

 0.11. Size:308K  infineon
 irf1405spbf irf1405lpbf.pdf

PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE

 0.12. Size:396K  infineon
 irf1405zpbf irf1405zspbf irf1405zlpbf.pdf

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 0.13. Size:246K  inchange semiconductor
 irf1405z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 0.14. Size:252K  inchange semiconductor
 irf1405s.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

 0.15. Size:258K  inchange semiconductor
 irf1405zs.pdf

Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol