All MOSFET. IRF1405 Datasheet

 

IRF1405 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1405

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 133 A

Total Gate Charge (Qg): 170 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm

Package: TO220AB

IRF1405 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1405 Datasheet (PDF)

1.1. irf1405pbf.pdf Size:258K _update

IRF1405
IRF1405

PD - 94969B IRF1405PbF Typical Applications HEXFET® Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3mΩ l Dynamic dv/dt Rating G l 175°C Operating Temperature ID = 169A† l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

1.2. irf1405lpbf irf1405spbf.pdf Size:308K _update

IRF1405
IRF1405

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3mΩ Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A† 175°C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFE

 1.3. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _upd-mosfet

IRF1405
IRF1405

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the latest pro

1.4. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _upd-mosfet

IRF1405
IRF1405

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9mΩ l Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ex

 1.5. irf1405z.pdf Size:179K _international_rectifier

IRF1405
IRF1405

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.6. irf1405s.pdf Size:154K _international_rectifier

IRF1405
IRF1405

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetiti

1.7. irf1405.pdf Size:116K _international_rectifier

IRF1405
IRF1405

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175C Operating Temperature Fast Switching Repetitive Avalanch

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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