IRF1405 Datasheet. Specs and Replacement

Type Designator: IRF1405  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 169 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 1210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO220AB

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IRF1405 substitution

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IRF1405 datasheet

 ..1. Size:258K  international rectifier
irf1405pbf.pdf pdf_icon

IRF1405

PD - 94969B IRF1405PbF Typical Applications HEXFET Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3m l Dynamic dv/dt Rating G l 175 C Operating Temperature ID = 169A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF... See More ⇒

 ..2. Size:116K  international rectifier
irf1405.pdf pdf_icon

IRF1405

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175 C Operating Temperature Fast Switching Repetitive A... See More ⇒

 ..3. Size:246K  inchange semiconductor
irf1405.pdf pdf_icon

IRF1405

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1405 IIRF1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM... See More ⇒

 0.1. Size:179K  international rectifier
irf1405z.pdf pdf_icon

IRF1405

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 4.9m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processin... See More ⇒

Detailed specifications: IRF1324S, IRF1324S-7P, IRF1404L, IRF1404S, IRF1404Z, IRF1404ZG, IRF1404ZL, IRF1404ZS, IRF9540, IRF1405L, IRF1405S, IRF1405Z, IRF1405ZL, IRF1405ZL-7P, IRF1405ZS, IRF1405ZS-7P, IRF1407

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.