IRF1405 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF1405
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 330 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 169 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 170 nC
Время нарастания (tr): 190 ns
Выходная емкость (Cd): 1210 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0053 Ohm
Тип корпуса: TO220AB
IRF1405 Datasheet (PDF)
..1. irf1405pbf.pdf Size:258K _international_rectifier
PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF
..2. irf1405.pdf Size:116K _international_rectifier
PD -93991AAUTOMOTIVE MOSFETIRF1405Typical Applications Electric Power Steering (EPS)HEXFET Power MOSFET Anti-lock Braking System (ABS)D Wiper ControlVDSS = 55V Climate Control Power DoorBenefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-ResistanceID = 169AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive A
..3. irf1405pbf.pdf Size:258K _infineon
PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF
..4. irf1405.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405IIRF1405FEATURESStatic drain-source on-resistance:RDS(on) 5.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.1. irf1405z.pdf Size:179K _international_rectifier
PD - 94645AUTOMOTIVE MOSFETIRF1405ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 4.9ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processin
0.2. auirf1405zs-7p.pdf Size:247K _international_rectifier
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
0.3. irf1405lpbf irf1405spbf.pdf Size:308K _international_rectifier
PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE
0.4. auirf1405zstrl.pdf Size:313K _international_rectifier
PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for
0.5. irf1405s.pdf Size:154K _international_rectifier
PD -93992IRF1405SAUTOMOTIVE MOSFETIRF1405LTypical ApplicationsHEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS)D Wiper Control VDSS = 55V Climate Control Power DoorRDS(on) = 5.3mBenefitsG Advanced Process TechnologyID = 131AV Ultra Low On-ResistanceS Dynamic dv/dt Rating 175C Operating Temperature Fast Switching R
0.6. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _international_rectifier
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
0.7. auirf1405.pdf Size:212K _international_rectifier
PD - 97691AAUTOMOTIVE GRADEAUIRF1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dv/dt RatingRDS(on) typ.4.6ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)169Al Repetitive Avalanche AllowedSup to TjmaxID (Package Limited)75Al Lead-Free,
0.8. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _international_rectifier
PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro
0.9. auirf1405zs auirf1405zl.pdf Size:345K _infineon
AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed
0.10. auirf1405zs-7p.pdf Size:247K _infineon
AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela
0.11. irf1405spbf irf1405lpbf.pdf Size:308K _infineon
PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE
0.12. irf1405zpbf irf1405zspbf irf1405zlpbf.pdf Size:396K _infineon
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
0.13. irf1405z.pdf Size:246K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
0.14. irf1405s.pdf Size:252K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM
0.15. irf1405zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Другие MOSFET... IRF1324S , IRF1324S-7P , IRF1404L , IRF1404S , IRF1404Z , IRF1404ZG , IRF1404ZL , IRF1404ZS , IRFZ34N , IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 .



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