IRF1405ZL-7P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1405ZL-7P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1310 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
Paquete / Cubierta: TO262-7
Búsqueda de reemplazo de IRF1405ZL-7P MOSFET
IRF1405ZL-7P PDF Specs
irf1405zl-7ppbf irf1405zs-7ppbf.pdf
PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 4.9m G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET Power MOSFET utilizes the latest pro... See More ⇒
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf
PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex... See More ⇒
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf
PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9m l Lead-Free G ID = 75A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ex... See More ⇒
auirf1405zs auirf1405zl.pdf
AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed... See More ⇒
Otros transistores... IRF1404ZG , IRF1404ZL , IRF1404ZS , IRF1405 , IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , AON7408 , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847 | AP4846 | AP4813K | AP4812S | AP4812 | AP40P05 | AP40P04Q | AP40P04K | AP40P04G | AP40N100LK | AP40N100K
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