All MOSFET. IRF1405ZL-7P Datasheet

 

IRF1405ZL-7P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF1405ZL-7P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 230 W
   Maximum Drain-Source Voltage |Vds|: 55 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 150 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 150 nC
   Rise Time (tr): 140 nS
   Drain-Source Capacitance (Cd): 1310 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0049 Ohm
   Package: TO262-7

 IRF1405ZL-7P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1405ZL-7P Datasheet (PDF)

 ..1. Size:319K  international rectifier
irf1405zl-7ppbf irf1405zs-7ppbf.pdf

IRF1405ZL-7P
IRF1405ZL-7P

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro

 5.1. Size:396K  international rectifier
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf

IRF1405ZL-7P
IRF1405ZL-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

 5.2. Size:345K  infineon
auirf1405zs auirf1405zl.pdf

IRF1405ZL-7P
IRF1405ZL-7P

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

 5.3. Size:396K  infineon
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf

IRF1405ZL-7P
IRF1405ZL-7P

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 18N50 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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