IRF1405ZL-7P
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF1405ZL-7P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 150
nC
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 1310
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049
Ohm
Package: TO262-7
IRF1405ZL-7P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF1405ZL-7P
Datasheet (PDF)
..1. Size:319K international rectifier
irf1405zl-7ppbf irf1405zs-7ppbf.pdf
PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro
5.1. Size:396K international rectifier
irf1405zlpbf irf1405zpbf irf1405zspbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
5.2. Size:345K infineon
auirf1405zs auirf1405zl.pdf
AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed
5.3. Size:396K infineon
irf1405zpbf irf1405zspbf irf1405zlpbf.pdf
PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex
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