IRF2804S-7P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2804S-7P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 320 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 1750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: TO263-7

 Búsqueda de reemplazo de IRF2804S-7P MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRF2804S-7P datasheet

 ..1. Size:280K  international rectifier
 irf2804s-7ppbf.pdf pdf_icon

IRF2804S-7P

PD - 97057A IRF2804S-7PPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature l Fast Switching VDSS = 40V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G RDS(on) = 1.6m Description S This HEXFET Power MOSFET utilizes the latest ID = 160A S (Pin 2, 3 ,5,6,7) processing techniques to achieve extr

 0.1. Size:355K  infineon
 auirf2804s-7p.pdf pdf_icon

IRF2804S-7P

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

 6.1. Size:408K  international rectifier
 irf2804pbf irf2804spbf irf2804lpbf.pdf pdf_icon

IRF2804S-7P

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

 6.2. Size:408K  international rectifier
 irf2804lpbf irf2804pbf irf2804spbf.pdf pdf_icon

IRF2804S-7P

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e

MOSTRAR MÁS

Otros transistores... IRF1607, IRF1902, IRF2204, IRF2204L, IRF2204S, IRF2804, IRF2804L, IRF2804S, 12N60, IRF2805, IRF2805L, IRF2805S, IRF2807Z, IRF2807ZL, IRF2807ZS, IRF2903Z, IRF2903ZL