IRF2804S-7P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF2804S-7P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 330 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 320 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 1750 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
Тип корпуса: TO263-7
Аналог (замена) для IRF2804S-7P
IRF2804S-7P Datasheet (PDF)
irf2804s-7ppbf.pdf
PD - 97057AIRF2804S-7PPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating Temperaturel Fast SwitchingVDSS = 40Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeGRDS(on) = 1.6mDescriptionSThis HEXFET Power MOSFET utilizes the latestID = 160AS (Pin 2, 3 ,5,6,7)processing techniques to achieve extr
auirf2804s-7p.pdf
AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc
irf2804lpbf irf2804pbf irf2804spbf.pdf
PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e
auirf2804strr.pdf
AUTOMOTIVE GRADE PD -96290AAUIRF2804AUIRF2804SAUIRF2804LFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceV(BR)DSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.5m l Fast Switchingl Repetitive Avalanche Allowed up to Tjmax max. 2.0m Gl Lead-Free, RoHS CompliantID (Silicon Limited) 270A l Automotive Qualified *SID
irf2804pbf irf2804spbf irf2804lpbf.pdf
PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e
auirf2804 auirf2804s auirf2804l.pdf
AUIRF2804 AUIRF2804S AUTOMOTIVE GRADE AUIRF2804L Features VDSS 40V Advanced Process Technology RDS(on) typ. 1.5m Ultra Low On-Resistance max. 2.0m 175C Operating Temperature ID (Silicon Limited) 270A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 195A Lead-Free, RoHS Compliant Aut
irf2804s.pdf
isc N-Channel MOSFET Transistor IRF2804SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918