All MOSFET. IRF2804S-7P Datasheet

 

IRF2804S-7P Datasheet and Replacement


   Type Designator: IRF2804S-7P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 320 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 1750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TO263-7
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IRF2804S-7P Datasheet (PDF)

 ..1. Size:280K  international rectifier
irf2804s-7ppbf.pdf pdf_icon

IRF2804S-7P

PD - 97057AIRF2804S-7PPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating Temperaturel Fast SwitchingVDSS = 40Vl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeGRDS(on) = 1.6mDescriptionSThis HEXFET Power MOSFET utilizes the latestID = 160AS (Pin 2, 3 ,5,6,7)processing techniques to achieve extr

 0.1. Size:355K  infineon
auirf2804s-7p.pdf pdf_icon

IRF2804S-7P

AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc

 6.1. Size:408K  international rectifier
irf2804pbf irf2804spbf irf2804lpbf.pdf pdf_icon

IRF2804S-7P

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 6.2. Size:408K  international rectifier
irf2804lpbf irf2804pbf irf2804spbf.pdf pdf_icon

IRF2804S-7P

PD - 95332BIRF2804PbFIRF2804SPbFIRF2804LPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.0ml Lead-FreeGID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

Datasheet: IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , 18N50 , IRF2805 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL .

History: TSA20N65MR | NCES120R062T4 | IPP076N15N5 | NTP30N06 | CS2N100LF | P06P03LVG | AP6950GYT-HF

Keywords - IRF2804S-7P MOSFET datasheet

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