IRF2804S-7P Specs and Replacement
Type Designator: IRF2804S-7P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 1750 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TO263-7
IRF2804S-7P substitution
- MOSFET ⓘ Cross-Reference Search
IRF2804S-7P datasheet
irf2804s-7ppbf.pdf
PD - 97057A IRF2804S-7PPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature l Fast Switching VDSS = 40V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G RDS(on) = 1.6m Description S This HEXFET Power MOSFET utilizes the latest ID = 160A S (Pin 2, 3 ,5,6,7) processing techniques to achieve extr... See More ⇒
auirf2804s-7p.pdf
AUIRF2804S-7P AUTOMOTIVE GRADE Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 1.6m Fast Switching ID (Silicon Limited) 320A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 240A Automotive Qualified * Desc... See More ⇒
irf2804pbf irf2804spbf irf2804lpbf.pdf
PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e... See More ⇒
irf2804lpbf irf2804pbf irf2804spbf.pdf
PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve e... See More ⇒
Detailed specifications: IRF1607, IRF1902, IRF2204, IRF2204L, IRF2204S, IRF2804, IRF2804L, IRF2804S, 12N60, IRF2805, IRF2805L, IRF2805S, IRF2807Z, IRF2807ZL, IRF2807ZS, IRF2903Z, IRF2903ZL
Keywords - IRF2804S-7P MOSFET specs
IRF2804S-7P cross reference
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IRF2804S-7P pdf lookup
IRF2804S-7P substitution
IRF2804S-7P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AO4832
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