IRF2903ZL Todos los transistores

 

IRF2903ZL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF2903ZL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 235 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 1980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO262
 

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IRF2903ZL Datasheet (PDF)

 ..1. Size:346K  international rectifier
irf2903zlpbf irf2903zspbf.pdf pdf_icon

IRF2903ZL

PD - 96098AIRF2903ZSPbFIRF2903ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4ml Repetitive Avalanche Allowed up to TjmaxGl Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestDDprocessing techniques to achieve extremel

 0.1. Size:705K  infineon
auirf2903zs auirf2903zl.pdf pdf_icon

IRF2903ZL

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie

 6.1. Size:287K  international rectifier
irf2903zpbf.pdf pdf_icon

IRF2903ZL

PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance

 6.2. Size:419K  infineon
auirf2903z.pdf pdf_icon

IRF2903ZL

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu

Otros transistores... IRF2804S-7P , IRF2805 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRFP250 , IRF2903ZS , IRF2907Z , IRF2907ZL , IRF2907ZS , IRF2907ZS-7P , IRF3007 , IRF3007L , IRF3007S .

History: SHD225505 | 2SK3608-01S | ZXM64P02X | 2SK3262 | PPMT20V4E | HM50P03D | 12N10

 

 
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