All MOSFET. IRF2903ZL Datasheet

 

IRF2903ZL Datasheet and Replacement


   Type Designator: IRF2903ZL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 235 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 1980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO262
 

 IRF2903ZL substitution

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IRF2903ZL Datasheet (PDF)

 ..1. Size:346K  international rectifier
 irf2903zlpbf irf2903zspbf.pdf pdf_icon

IRF2903ZL

PD - 96098AIRF2903ZSPbFIRF2903ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4ml Repetitive Avalanche Allowed up to TjmaxGl Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestDDprocessing techniques to achieve extremel

 0.1. Size:705K  infineon
 auirf2903zs auirf2903zl.pdf pdf_icon

IRF2903ZL

AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie

 6.1. Size:287K  international rectifier
 irf2903zpbf.pdf pdf_icon

IRF2903ZL

PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance

 6.2. Size:419K  infineon
 auirf2903z.pdf pdf_icon

IRF2903ZL

AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu

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Datasheet: IRF2804S-7P , IRF2805 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , 2N7002 , IRF2903ZS , IRF2907Z , IRF2907ZL , IRF2907ZS , IRF2907ZS-7P , IRF3007 , IRF3007L , IRF3007S .

Keywords - IRF2903ZL MOSFET datasheet

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 IRF2903ZL replacement

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