IRF2903ZL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF2903ZL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 231 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 235 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 160 nC
trⓘ - Время нарастания: 100 ns
Cossⓘ - Выходная емкость: 1980 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0024 Ohm
Тип корпуса: TO262
IRF2903ZL Datasheet (PDF)
irf2903zlpbf irf2903zspbf.pdf
PD - 96098AIRF2903ZSPbFIRF2903ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4ml Repetitive Avalanche Allowed up to TjmaxGl Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes the latestDDprocessing techniques to achieve extremel
auirf2903zs auirf2903zl.pdf
AUIRF2903ZS AUTOMOTIVE GRADE AUIRF2903ZL Features VDSS 30V Advanced Process Technology RDS(on) typ. 1.9m Ultra Low On-Resistance max. 2.4m 175C Operating Temperature ID (Silicon Limited) 235A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Automotive Qualifie
irf2903zpbf.pdf
PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance
irf2903zpbf.pdf
PD -96097AIRF2903ZPbFFeatures HEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 2.4mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeID = 75ASDescriptionDThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance
auirf2903z.pdf
AUTOMOTIVE GRADE AUIRF2903Z Features HEXFET Power MOSFET Advanced Planar Technology VDSS 30V Ultra Low On-Resistance RDS(on) typ. 1.9m 175C Operating Temperature max. 2.4m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 260A Lead-Free, RoHS Compliant ID (Package Limited) 160A Automotive Qu
irf2903z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2903ZIIRF2903ZFEATURESLow drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RA
irf2903zs.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF2903ZSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU
Другие MOSFET... IRF2804S-7P , IRF2805 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRFZ24N , IRF2903ZS , IRF2907Z , IRF2907ZL , IRF2907ZS , IRF2907ZS-7P , IRF3007 , IRF3007L , IRF3007S .
Список транзисторов
Обновления
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