IRF3710Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3710Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 59 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 77 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF3710Z MOSFET
IRF3710Z PDF Specs
irf3710z.pdf
PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes th... See More ⇒
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn... See More ⇒
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf
PD - 95466A IRF3710ZPbF IRF3710ZSPbF Features IRF3710ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 18m G Description ID = 59A This HEXFET Power MOSFET utilizes the latest S processing techn... See More ⇒
irf3710z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3710Z IIRF3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM ... See More ⇒
Otros transistores... IRF3708S , IRF3709 , IRF3709L , IRF3709S , IRF3709Z , IRF3709ZCS , IRF3709ZL , IRF3709ZS , IRF9640 , IRF3710ZG , IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 .
History: 2SJ213
History: 2SJ213
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