IRF3710Z Todos los transistores

 

IRF3710Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF3710Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 160 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 59 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO220AB
 

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IRF3710Z Datasheet (PDF)

 ..1. Size:172K  international rectifier
irf3710z.pdf pdf_icon

IRF3710Z

PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

 ..2. Size:382K  international rectifier
irf3710zlpbf irf3710zpbf irf3710zspbf.pdf pdf_icon

IRF3710Z

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

 ..3. Size:382K  international rectifier
irf3710zpbf irf3710zspbf irf3710zlpbf.pdf pdf_icon

IRF3710Z

PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techn

 ..4. Size:246K  inchange semiconductor
irf3710z.pdf pdf_icon

IRF3710Z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... IRF3708S , IRF3709 , IRF3709L , IRF3709S , IRF3709Z , IRF3709ZCS , IRF3709ZL , IRF3709ZS , AON7403 , IRF3710ZG , IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 .

History: TPC8401 | HY4306B6 | BRFL13N50 | 2SK1478 | IXFT12N100F | CEF02N6G | 2SK65

 

 
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