All MOSFET. IRF3710Z Datasheet

 

IRF3710Z MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF3710Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 59 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 82 nC
   trⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220AB

 IRF3710Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3710Z Datasheet (PDF)

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Datasheet: IRF3708S , IRF3709 , IRF3709L , IRF3709S , IRF3709Z , IRF3709ZCS , IRF3709ZL , IRF3709ZS , 5N65 , IRF3710ZG , IRF3710ZL , IRF3710ZS , IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 .

 

 
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