IRF3808 Todos los transistores

 

IRF3808 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3808

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 330 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 140 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 150 nC

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO220AB

Búsqueda de reemplazo de MOSFET IRF3808

 

IRF3808 Datasheet (PDF)

1.1. irf3808s.pdf Size:161K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007? Dynamic dv/dt Rating G 175C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to Tjmax D

1.2. irf3808.pdf Size:131K _international_rectifier

IRF3808
IRF3808

PD - 94291B IRF3808 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.007? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 140AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

 1.3. irf3808lpbf irf3808spbf.pdf Size:309K _international_rectifier

IRF3808
IRF3808

PD - 95467A IRF3808SPbF IRF3808LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 106A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe H

1.4. irf3808l.pdf Size:165K _international_rectifier

IRF3808
IRF3808

PD - 94338A IRF3808S AUTOMOTIVE MOSFET IRF3808L Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω Dynamic dv/dt Rating G 175°C Operating Temperature ID = 106AV Fast Switching S Repetitive Avalanche Allowed up to T

 1.5. irf3808pbf.pdf Size:246K _international_rectifier

IRF3808
IRF3808

PD - 94972A IRF3808PbF HEXFET® Power MOSFET Typical Applications Industrial Motor Drive D VDSS = 75V Benefits Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.007Ω G Dynamic dv/dt Rating 175°C Operating Temperature ID = 140A† Fast Switching S Repetitive Avalanche Allowed up to Tjmax Lead-Free Description This Advanced Planar Stripe HEXFET ® Power

1.6. irf3808s.pdf Size:258K _inchange_semiconductor

IRF3808
IRF3808

Isc N-Channel MOSFET Transistor IRF3808S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.7. irf3808.pdf Size:245K _inchange_semiconductor

IRF3808
IRF3808

isc N-Channel MOSFET Transistor IRF3808,IIRF3808 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYM

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